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ERC Starting Grant · 2019

Solution-Based Engineering of Nanodimensional Phase-Change Materials and Memory Devices

Phase-change memory (PCM) is a recently-commercialized next-generation memory storage technology that provides a sustainable solution to exponentially-growing memory storage demands of modern society. It is based on resistively switched structural changes of memory cell upon local crystallization and melting phase transitions, resulting in amorphous or crystalline atomic structures with distinctly different “0” and “1” resistance states. PCM is faster and more durable than state-of-the-art non-volatile memory devices like silicon-based solid-state drives (SSD), and it can furthermore be scaled in all three dimensions. However, there are open challenges for PCM technology, such as large…

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