ERC Advanced Grant · 2020
Engineering low power tunnel transistors based on two-dimensional semiconductors
Modern electronics consume a huge amount of world’s energy – currently ~ 5% and rising to > 20% in 2030. Field effect transistors (FETs) account for a large fraction of the energy consumed in electronics due to high OFF state (leakage) currents and large operating voltage (~ 0.8V). Tunnel FETs (TFETs) based on two-dimensional semiconductors (2D SCs) provide unique and game-changing solutions for both of these problems and can be engineered using industry compatible complementary metal oxide semiconductor (CMOS) processes. However, despite the intense effort over the past decade, serious challenges remain in realizing high performance TFETs. The challenges, related to achieving high quality…
From the public funding record at EU CORDIS. Describes the funded project, not the reviews below.