ERC Starting Grant · 2016
Enabling flexible integrated circuits and applications
Thin-film transistor technologies are present in many products today that require an active transistor backplane e.g. flat-panel displays and flat-panel photodetector arrays. Unipolar n-type transistors based on amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) as semiconductor is currently the most promising technology for next generation products demanding a high-performant, low power transistor, manufacturable on flexible substrates enabling curved, bendable and even rollable displays. a-IGZO is a wide bandgap material characterized by extremely low off-state leakage currents and electron mobility of ~20 cm2/Vs. IGZO transistors fabricated on flexible substrates will also find their use in…
From the public funding record at EU CORDIS. Describes the funded project, not the reviews below.
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