ERC Advanced Grant · 2020
Dynamic Properties of Ferroelectric III-V MOSFETs
The discovery of ferroelectric characteristics in annealed HfO2–based films opens a wide range of applications not only in memory and logic, but the results will enable new scientific directions for instance in reconfigurable electronics. So far, ferroelectric films have been investigated in metal-insulator-metal structures suitable for back-end-of-line integration. They have also been introduced onto Si and two-dimensional materials. However, there is a gap of knowledge with lack of science and technology for integration of HfO2–based ferroelectric films on III-V channel materialswhere the increased permittivity will improve electrostatics. III-V transistors hold a key position for…
From the public funding record at EU CORDIS. Describes the funded project, not the reviews below.