ERC Advanced Grant · 2022
Strain-Free All Heusler Alloy Junctions
Spintronics is anticipated to replace current semiconductor-based memories and sensors based on fast-operating times (< ns) and low power consumption (<pJ per read/write operation). The spintronic devices typically consist of a magnetoresistive junction with a free ferromagnet/oxide barrier or non-magnet/pinned ferromagnet trilayer and may suffer from edge-domain formation and leakage current through the barrier by further miniaturisation (<10 nm in cell diameter). To avoid such obstacles, antiferromagnetic spintronics has recently been developed by introducing spin-orbit torque which can reduce the power consumption by over two orders of magnitude but contain critical raw materials. In…
From the public funding record at EU CORDIS. Describes the funded project, not the reviews below.