ERC Advanced Grant · 2024
Electronic Doping of Soft Semiconductors
EDO will develop protocols for intentional, spatially controlled, and stable electronic doping in metal halide semiconductors. Electronic doping implies engineering of carrier density in semiconductors through the intentional introduction of a defect and it is necessary to achieve high performances in micro and optoelectronic technologies. Unlike established semiconductors, which are typically covalent solids, those belonging to the class of soft materials, such as molecules and polymers, forming van der Waals solids, and metal halide perovskites, forming ionic solids, host complex doping mechanisms. As a result, the design of free carrier density is far from being established and exploited…
From the public funding record at EU CORDIS. Describes the funded project, not the reviews below.