ERC Starting Grant · 2025
Atomically thin semiconductors for complementary field effect transistors
Atomically thin body (ATB) semiconductors such as transition metal dichalcogenides (TMDs) hold tremendous promise for scaling modern electronics because their ultra-thin channel provides excellent gate electrostatics. Major semiconductor companies and international roadmaps for devices and systems have cited ATB TMDs for sub-1-nm semiconductor technologies beyond 2030. ATOMS will focus on developing ultra-scaled complementary field effect transistors (CFETs) based on ATB semiconductors, offering a transformative approach to address the scaling challenges of current semiconductor technology. The project aims to create ultra-short channel CFETs by optimising electrical contacts, developing…
From the public funding record at EU CORDIS. Describes the funded project, not the reviews below.